Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements

Rukshan M. Tanthirige (Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA)
Carlos Garcia (National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA)
Saikat Ghosh (Kunming University of Science and Technology, Kunming 650500, China)
Frederick Jackson II (Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA)
Jawnaye Nash (Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA)
Daniel Rosenmann (Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA)
Ralu Divan (Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA)
Liliana Stan (Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA)
Anirudha V. Sumant (Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA)
Stephen A. McGill (National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA)
Paresh C. Ray (Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA)
Nihar R. Pradhan (Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA; National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA)

Article ID: 1526

Abstract


We report intrinsic photoconductivity studies on one of the least examinedlayered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistorswere fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurationsunder the illumination of 532 nm laser source. We measured photocurrentas a function of the incident optical power at several source-drain (bias)voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to thatin the two-terminal configuration. For an incident optical power of 90nW, the estimated photosensitivity and the external quantum efficiency(EQE) measured in two-terminal configuration are 0.5 A/W and 120%,respectively, under a bias voltage of 650 mV. Under the same conditions,the four-terminal measurements result in much higher values for both thephotoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. Thissignificant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contactresistance at the metal-semiconductor interface, which greatly impacts thecarrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configurationin previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides andtheir remarkable potential for optoelectronic applications.

Keywords


Field-effect transistors; Zirconium sulphide ;Phototransistor; Responsivity; Quantum efficiency

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DOI: https://doi.org/10.30564/ssid.v1i2.1526

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Copyright © 2020 Rukshan M. Tanthirige, Carlos Garcia, Saikat Ghosh, Frederic Jackson II, Jawnaye Nash, Daniel Rosenmann, Ralu Divan, Liliana Stan, Anirudha V. Sumant, Stephen A. McGill, Nihar R. Pradhan


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